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MOQ : 20
Packaging Details : SMD
Card Type : Nano-SIM Card
Model Number : NANO SIM 7P H1.37
Operating Temperature : -40℃~+70℃
Description : Card Connector NANO SIM Push-Push Surface Mount
Height Above Board : 1.37mm
Card Connection Mode : Push-Push
Stock : 2991
Connector Type : Connector and Ejector
Brand Name : NANO SIM 7P H1.37
Delivery Time : 1工作日
Card Detection : With Card Detect
Function: Detects the insertion of a SIM card.
Usage: Used in electronic devices to interface with SIM cards.
Notes:
Technical Specialty:
SHENZHEN SHOUHAN TECHNOLOGY CO.,LTD
China
NANO SIM 7P H1.37
RoHS
Tray or Carrier Tape (as per purchase order)
| Item | Requirements | Test Methods |
|---|---|---|
| Confirmation of Product | Product shall be conforming to the requirements of applicable product drawing. | Visually, dimensions and functionally inspected per applicable product drawing. |
| Contact resistance (Low Level) | Max. initial 100m | Subject mated contacts assembled in housing to closed circuit of 10 mA max. at open circuit voltage of 20 mV max. |
| Insulation resistance | Min. 1000 M | Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 302, Condition B (500 V DC10%). |
| Dielectric Strength | 500 V AC for 1 minute. Current leakage must be 1.0 mA max. | Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 301. |
| Durability (Repeated Mating/Unmating) | Contact Resistance: 100 m Max. after testing | Mate and unmate connector for 1500 cycles. |
| Temperature rise | 30 C Max. | Carry rated current load. 0.3A per contact. (UL498) |
| Vibration Sinusoidal Low Frequency | No electrical discontinuity greater then 1 sec (s) shall occur. Contact resistance: 100 m max. | Subject mated connector to 10-55-10 Hz traversed in 1 minute at 1.5 mm amplitude 2 hours each of 3 mutually perpendicular plane, 10 mA applied. MIL-STD-202, Method 201. |
| Shock | No electrical discontinuity greater than 1 sec. shall occur. No damage to product. | Applying an appropriate holder is allowed in vibration test and shock test. MIL-STD-202, Method 213, 490 m/s, 3 axes. |
| Thermal shock | No damage, Contact Resistance (Low Level) (Final) 100 m max. | Temperature range from -55C to +85C. Start from -55C. After 30 min. change to +85C, change time is no more than 30 seconds. Total 5 cycles. MIL-STD-202, Method 107D, condition A. |
| Humidity | No damage, Contact Resistance (Low Level) (Final) 100 m max. Dielectric Strength should be OK, Insulation Resistance should be 100 M min. | Temperature: 40 2 C 96 hours. Relative humidity: 90-95%; Duration: 96 Hours. MIL-STD-202, Method 103. |
| Solderability | Appearance of the specimen shall be inspected after the test with the assistance of a magnifier capable of giving a magnification of 10 X for any damage such as pinholes, void or rough surface. | Soldering time: 3 to 5 Seconds. Temperature: 2505C. |
| Resistance to soldering heat | No damage | Leave subject product |
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SHOU HAN NANO SIM 7P H1.37 Images |