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SHOU HAN NANO SIM 7P H1.37

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SHOU HAN NANO SIM 7P H1.37

MOQ : 20

Packaging Details : SMD

Card Type : Nano-SIM Card

Model Number : NANO SIM 7P H1.37

Operating Temperature : -40℃~+70℃

Description : Card Connector NANO SIM Push-Push Surface Mount

Height Above Board : 1.37mm

Card Connection Mode : Push-Push

Stock : 2991

Connector Type : Connector and Ejector

Brand Name : NANO SIM 7P H1.37

Delivery Time : 1工作日

Card Detection : With Card Detect

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Product Overview

Function: Detects the insertion of a SIM card.

Usage: Used in electronic devices to interface with SIM cards.

Notes:

  • Material: Housing: High Temperature Thermoplastic, Terminal: Copper Alloy, Shell: Stainless Steel.
  • Plating: Terminal: 50u" Ni Underplated Overall G/F Plated On Contact Area G/F Plated On Solder Area; Shell: 30u" Ni Underplated Overall G/F Plated On Contact Area And older Area.

Technical Specialty:

  • Rated Voltage: 30V
  • Current Rating: 0.5A
  • Insulation Resistance: 1000M Min.
  • Contact Resistance: 100m Max.
  • Withstanding Voltage: 500V DC For 1 Minute.
  • Operating Temperature: -40+75
  • Humidity: 80% R.H Max.

Brand

SHENZHEN SHOUHAN TECHNOLOGY CO.,LTD

Origin

China

Part Number

NANO SIM 7P H1.37

Certifications

RoHS

Package Type

Tray or Carrier Tape (as per purchase order)

Item Requirements Test Methods
Confirmation of Product Product shall be conforming to the requirements of applicable product drawing. Visually, dimensions and functionally inspected per applicable product drawing.
Contact resistance (Low Level) Max. initial 100m Subject mated contacts assembled in housing to closed circuit of 10 mA max. at open circuit voltage of 20 mV max.
Insulation resistance Min. 1000 M Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 302, Condition B (500 V DC10%).
Dielectric Strength 500 V AC for 1 minute. Current leakage must be 1.0 mA max. Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 301.
Durability (Repeated Mating/Unmating) Contact Resistance: 100 m Max. after testing Mate and unmate connector for 1500 cycles.
Temperature rise 30 C Max. Carry rated current load. 0.3A per contact. (UL498)
Vibration Sinusoidal Low Frequency No electrical discontinuity greater then 1 sec (s) shall occur. Contact resistance: 100 m max. Subject mated connector to 10-55-10 Hz traversed in 1 minute at 1.5 mm amplitude 2 hours each of 3 mutually perpendicular plane, 10 mA applied. MIL-STD-202, Method 201.
Shock No electrical discontinuity greater than 1 sec. shall occur. No damage to product. Applying an appropriate holder is allowed in vibration test and shock test. MIL-STD-202, Method 213, 490 m/s, 3 axes.
Thermal shock No damage, Contact Resistance (Low Level) (Final) 100 m max. Temperature range from -55C to +85C. Start from -55C. After 30 min. change to +85C, change time is no more than 30 seconds. Total 5 cycles. MIL-STD-202, Method 107D, condition A.
Humidity No damage, Contact Resistance (Low Level) (Final) 100 m max. Dielectric Strength should be OK, Insulation Resistance should be 100 M min. Temperature: 40 2 C 96 hours. Relative humidity: 90-95%; Duration: 96 Hours. MIL-STD-202, Method 103.
Solderability Appearance of the specimen shall be inspected after the test with the assistance of a magnifier capable of giving a magnification of 10 X for any damage such as pinholes, void or rough surface. Soldering time: 3 to 5 Seconds. Temperature: 2505C.
Resistance to soldering heat No damage Leave subject product

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